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Professor of Electrical Engineering and Computer Sciences with over four decades of research and development experience in nanoscale semiconductor device physics. This expert specializes in MOSFET device scaling, extreme ultraviolet lithography optics, nanomagnetic logic architectures, and spintronics. Maintains joint academic and laboratory appointments at leading institutions in both academia and national laboratories, with expertise spanning advanced semiconductor manufacturing, optical technologies, and device physics. Author of 300+ peer-reviewed publications and holder of more than a dozen patents.

Formal Education

  • Ph.D. in Electrical Engineering from Stanford University
  • MS in Electrical Engineering from Stanford University
  • BS in Electrical Engineering from Massachusetts Institute of Technology

Career Highlights

  • Department Chair of Electrical Engineering and Computer Sciences at a top-tier research university
  • Faculty Senior Scientist at a national research laboratory
  • Deputy Director for Science at a user facility within a national research laboratory
  • Department Head for advanced semiconductor technology research at a major industrial research laboratory
  • Department Head for laser science research at a major industrial research laboratory
  • Endowed Professor at a top-tier research university
  • Fellow of major professional engineering and scientific societies
  • Author of 300+ peer-reviewed publications and holder of more than a dozen patents

Expert Qualifications

  • Served as testifying and consulting expert in 30+ litigation matters involving semiconductor manufacturing, device physics, and advanced lithography
  • Retained by major semiconductor manufacturers in patent litigation matters
  • Expert testimony experience at both depositions and trial in cases involving FinFET technology, extreme ultraviolet lithography, and nanoscale device physics
  • Deep technical expertise in spin-transfer torque switching, magnetic tunnel junction devices, graphene nanoribbon transistors, and nanofabrication
  • Specialized knowledge in semiconductor process integration, device modeling, and technology roadmaps spanning decades of research

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Frequently Asked Questions

What types of cases can this expert support?

This expert has been retained in 30+ semiconductor and device physics cases, with courtroom experience in both depositions and trials. They've focused on patent disputes involving FinFET technology, extreme ultraviolet lithography, and nanoscale device physics—primarily for major semiconductor manufacturers.

What is this expert's technical background?

They hold a PhD and MS in Electrical Engineering from Stanford and a BS from MIT. Over 40 years in the field, they've served as department chair at a top research university, held senior scientist posts at national laboratories, headed advanced semiconductor and laser research at major industrial labs, and authored 300+ peer-reviewed papers with 10+ patents.

What technologies does this expert specialize in?

Their technical foundation covers FinFET and MOSFET scaling, extreme ultraviolet lithography optics, spintronics with spin-orbit torque switching, magnetic tunnel junction devices, carbon nanotube transistors, graphene nanoribbons, nanomagnetic logic, and silicon-on-insulator devices.

Expert B260R
Technologies
  • FinFET device physics
  • MOSFET channel length scaling
  • Extreme ultraviolet lithography
  • Spintronics and spin-orbit torque switching
  • Magnetic tunnel junction devices
  • Carbon nanotube transistors
  • Silicon-on-insulator MOSFET
  • Nanomagnetic logic architectures
Venues
  • U.S. District Courts
  • Patent Trial and Appeal Board